MJW21196G 数据手册
其他文档
MJW21195, 6 7 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi MJW21196G
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 16A
- Power Dissipation (Pd): 200W
- Transition Frequency (fT): 4MHz
- DC Current Gain (hFE@Ic,Vce): 20@8A,5V
- Collector Cut-Off Current (Icbo): 100uA
- Collector-Emitter Breakdown Voltage (Vceo): 250V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 3V@16A,3.2A
- Package: TO-247
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Active
- Current - Collector (Ic) (Max): 16A
- Voltage - Collector Emitter Breakdown (Max): 250V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 3.2A, 16A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 5V
- Power - Max: 200W
- Frequency - Transition: 4MHz
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
- Base Part Number: MJW21
- detail: Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-247